STB434S datasheet(1/8 Pages) SAMHOP

Part #	STB434S

Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

STB/P434S

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

40

60

176

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

40V

60A

11.5 @ VGS=4.5V

9.2 @ VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-220 and TO-263 Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.0

www.samhop.com.tw

Nov,14,2008

1

Details are subject to change without notice.

TC=25°C

W

PD

°C

62.5

-55 to 150

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

62.5

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

2

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=70°C

A

EAS

mJ

Sigle Pulse Avalanche Energy

d

TC=70°C

W

a

91

48

40

STB SERIES

TO-263(DD-PAK)

G

S

D

STP SERIES

TO-220

S

D

G

S

G

D

a

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STB434S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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