STP432S datasheet(2/8 Pages) SAMHOP

2 / 8 page

4 Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

gFS

VSD

CISS

1600

COSS

280

CRSS

150

Qgs

Qgd

tD(ON)

3.5

tD(OFF)

7.3

Gate-Drain Charge

VDS=15V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=15V

ID=30A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=15V,ID=30A,VGS=10V

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=30A

VDS=10V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=28A

m ohm

f=1.0MHz

VDS=15V,ID=30A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=30A

0.95

1.3

Notes

STB/P432S

Ver 1.0

www.samhop.com.tw

Jun,24,2008

VDS=15V,ID=28A,VGS=4.5V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=1.25mH,RG=25

Ω,VDD = 20V.(See Figure13)

1.7

Maximum Continuous Drain-Source Diode Forward Current

STP432S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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