STP434S datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

1.3

7.6

gFS

CISS

1160

COSS

211

CRSS

135

tD(ON)

tD(OFF)

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=20V

ID=1A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=30A

VDS=10V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=25A

9.2

8.8

11.5

m ohm

f=1.0MHz

STB/P434S

Ver 1.0

www.samhop.com.tw

Nov,14,2008

1.7

VSD

Qgs

Qgd

2.1

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=20V,ID=30A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=10A

0.84

1.3

Maximum Continuous Drain-Source Diode Forward Current

Notes

VDS=20V,ID=30A,VGS=10V

VDS=20V,ID=30A,VGS=4.5V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)

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