STM6610 datasheet(3/7 Pages) SAMHOP

Part #	STM6610

Description	Dual N-Channel E nhancement Mode F ield E ffect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 7 page

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

0.5

1.5

2.5

VGS=3V

0.7

1.4

2.1

2.8

3.5

4.2

Tj=125 C

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

Notes

c.Guaranteed by design,not subject to production testing.

b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.

a.Surface Mounted on FR4 Board,t 10sec.

VGS=3.5V

S T M6610

VGS=4.5V

VGS=4V

VGS=10V

-55 C

25 C

ID, Drain C urrent (A)

F igure 3. On-R es is tance vs . Drain C urrent

and G ate V oltage

V GS =10V

V GS =4.5V

VGS=2.5V

VGS = 0V, Is =1.7A

0.8

1.2

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

1.5

1.4

1.3

1.2

1.1

1.0

100

T j( C )

T j, J unction T emperature ( C )

V G S =4.5V

ID=5A

125

V G S =10V

ID=8A

150

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