STS2601 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

-20

IGSS

±100

VGS(th)

-0.5

gFS

VSD

CISS

586

COSS

101

CRSS

6.5

32.1

Qgs

58.4

Qgd

tD(ON)

1.36

tD(OFF)

1.4

Gate-Drain Charge

VDS=-10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-10V

ID=-1A

VGS=-4.5V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=-4.5V , ID=-4.0A

VDS=-5.0V , ID=-4.0A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-16V , VGS=0V

VGS= ±10V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

f=1.0MHz

VDS=-10V,ID=-4.0A,

VGS=-4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-1.25A

-0.815

-1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

STS2601

Ver 1.0

www.samhop.com.tw

Nov,17,2008

-0.8

-1.5

Maximum Continuous Drain-Source Diode Forward Current

-1.25

5.92

VGS=-2.5V , ID=-3.4A

110

m ohm

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