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STS6601 Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

Part # STS6601
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6601 Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STS6601
Ver 1.0
www.samhop.com.tw
Sep,30,2008
4
300
250
200
150
100
50
0
2
4
6
8
10
0
ID=-3.2A
25 C
125 C
75 C
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
1000
800
600
400
200
0
10
15
20
25
30
C rs s
C s s
o
C s s
i
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
10
8
6
4
2
0
V DS = -30V
ID=-3.2A
0
2
4
6
8
10
12
14
16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
60
600
V DS =-30V,ID=-1A
V G S =-10V
1
1
6 10
60 100
600
300
T D ( o f f )
T D ( o n )
T r
T f
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
0
5
0.1
1
10
100
0.1
0.01
1
10
R
DS
(O
N)
Lim
it
1m
s
100
us
50
10m
s
V GS =-10V
S ingle P uls e
T c=25 C
300
DC
10
1
20
0
0.3
0.6
0.9
1.2
1.5
125 C
25 C
75 C



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