STU309D datasheet(4/11 Pages) SAMHOP

Part #	STU309D

Description	Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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F igure 2. Trans fer C haracteris tics

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

ID, Drain C urrent (A)

V G S , G ate-to-S ource Voltage (V )

-55 C

0.8

1.6

2.4

3.2

4.0

4.8

25 C

1.5

1.4

1.3

1.2

1.1

1.0

0.0

T j( C )

100

125

V G S =10V

ID=10A

T j, J unction T emperature ( C )

F igure 1. Output C haracteris tics

V DS , Drain-to-S ource Voltage (V )

0.5

1.5

2.5

V GS =3V

V GS =3.5V

T j=125 C

V GS =10V

F igure 3. On-R es is tance vs . Drain C urrent

and G ate V oltage

V GS =10V

V GS =4.5V

V G S =4.5V

ID=8A

V GS =8V

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V, Is =10A

N-Ch

0.9

1.3

-0.9

-1.3

VGS = 0V, Is =-6A

P-Ch

Notes

b.Guaranteed by design,not subject to production testing.

a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.

N-Channel

V GS =4.5V

150

S T U309D

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