Dual E nhancement Mode Field E ffect Transistor ( N and P C hannel)

Nov,20 2007 ver1.0

Parameter

Symbol

N-C hannel P -C hannel

Unit

Drain-S ource Voltage

V

G ate-S ource Voltage

V

Drain C urrent-C ontinuous @ Tc

-P ulsed

11

A

A

A

W

Drain-S ource Diode F orward C urrent

Maximum P ower Dissipation

Operating J unction and S torage

Temperature R ange

-55 to 175

C

a

40

7

-40

-9

-6

1

P R ODUC T S UMMAR Y

40V

11A

(N-C hannel)

P R ODUC T S UMMAR Y

-40V

-9A

(P -C hannel)

S amHop Microelectronics C orp.

20

20

-36

11

45

25 C

70 C

Tc= 25 C

Tc= 70 C

7.7

9

-7

A

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

Thermal R esistance, J unction-to-Ambient

13.6

120

/W

C

/W

C

S1

G1

D1

N-ch

S2

G2

D2

P-ch

TO-252-4L

D1/D2

S1

G1

S2

G2

S T U405DH