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2N6753 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6753 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6753 900 VCBO Collector-base voltage 2N6754 Open emitter 1000 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 10 A IB Base current 5 A PD Total Power Dissipation TC=25℃ 150 W Tj Junction temperature -65~175 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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