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2SC3088 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3088 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3088 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 50 hFE -2 DC current gain IC=1.5A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 40 pF fT Transition frequency IC=0.3A ; VCE=10V 18 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=2A ;IB1=-IB2=0.4 A RL=100Ω,VCC=200V 1.0 μs hFE-1 classifications L M N 15-30 20-40 30-50 |
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