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2SC4276 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4276 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4276 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 0.8 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=5V 25 65 Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=7.5A;RL=20Ω IB1=0.75A; IB2=-1.5A Pw = 20μs; Duty≤2% 0.5 μs |
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