| Electronic Components Datasheet Search |
|
2SD1376 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1376 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1376 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=1.0A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V VBEsat-1 Base-emitter saturation voltage IC=1.0A ;IB=1mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.5 V ICEO Collector cut-off current VCE=100V; RBE=∞ 10 μA ICBO Collector cut-off current VCB=120V; IE=0 100 μA hFE DC current gain IC=1A ; VCE=3V 2000 30000 VD Diode forward voltage ID=1.5A 3.0 V ton Turn-on time 0.5 μs toff Turn-off time IC=1A ;IB1=-IB2=1mA 2.0 μs |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |