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BUT11AF Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUT11AF Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUT11F BUT11AF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUT11F 400 VCEO(SUS) Collector-emitter sustaining voltage BUT11AF IC=0.1A; IB=0 450 V BUT11F IC=3A; IB=0.6A VCEsat Collector-emitter saturation voltage BUT11AF IC=2.5A; IB=0.5A 1.5 V BUT11F IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage BUT11AF IC=2.5A; IB=0.5A 1.3 V BUT11F VCE=850V ;VBE=0 ICES Collector cut-off current BUT11AF VCE=1000V ;VBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=2.5A; IB1=- IB2=0.5A VCC=250V;RL=100B 0.8 µs |
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