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2SD1691 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1691 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1691 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.0A ;IB=0.2A 0.3 V VBEsat Base-emitter saturation voltage IC=2.0A ;IB=0.2A 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 10 µA IEBO Emitter cut-off current VEB=7V; IC=0 10 µA hFE-1 DC current gain IC=0.1A ; VCE=1V 60 hFE-2 DC current gain IC=2A ; VCE=1V 100 400 hFE-3 DC current gain IC=5A ; VCE=1V 50 ton Turn-on time 0.2 1.0 µs tstg Storage time 1.1 2.5 µs tf Fall time IC=2A; IB1=-IB2=0.2A RL=5.0?;VCC@10V 0.2 1.0 µs hFE-2 Classifications M L K 100-200 160-320 200-400 |
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