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2SB855 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB855 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB855 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=6 -50 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown votage IE=-5mA; IC=0 -4 V VCEsat Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.2 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -100 µA hFE-1 DC current gain IC=-1A ; VCE=-4V 35 200 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 fT Transition frequency IC=-0.5A ; VCE=-4V 35 MHz hFE-1 classifications A B C 35-70 60-120 100-200 |
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