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2SB965 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB965 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB965 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -1.5 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-5V 60 320 hFE -2 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 150 pF fT Transition frequency IC=-1A ; VCE=-5V 75 MHz hFE-1 classifications R Q P 60-120 100-200 160-320 2 |
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