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KSA1614 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSA1614 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors KSA1614 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -55 V V(BR)CBO Collector-base breakdown voltage IC=-500μA ; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-500μA ; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A B -0.15 -0.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -50 μA hFE DC current gain IC=-0.5A ; VCE=-5V 40 240 hFE Classifications R O Y 40-80 70-140 120-240 2 |
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