2SC1623

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for audio frequency amplifier applications.

Pinning

1 = Base

2 = Emitter

3 = Collector

.091(2.30)

.067(1.70)

SOT-23

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40)

.108(0.65)

.089(0.25)

.045(1.15)

.034(0.85)

.118(3.00)

.110(2.80)

.020(0.50)

.012(0.30)

.0043(0.11)

.0035(0.09)

.004

(0.10)

.051(1.30)

.035(0.90)

.026(0.65)

.010(0.25)

Max

.027(0.67)

.013(0.32)

2

1

3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

60

-

-

V

Collector-Emitter Breakdown Voltage

50

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

Collector Cutoff Current

-

-

0.1

µA

Emitter Cutoff Current

-

-

0.1

µA

-

-

0.3

V

-

-

1

V

0.55

-

0.65

V

90

200

600

-

Transition Frequency

250

-

-

MHz

Output Capacitance

-

3

-

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

L4

L5

L6

L7

Range

90~180

135~270

200~400

300~600

Exit Data Book!!

(Listed in alphanumeric order)

(Refered to industrial part No.)

(Classified by function, voltage, & current)

(Listed in alphanumeric order)

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