2SC4242

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for high speed switching applications.

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

450

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

10

V

Collector Current

7

A

Base Current

2

A

40

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

450

-

-

V

Collector-Emitter Breakdown Voltage

450

-

-

V

Emitter-Base Breakdown Voltage

10

-

-

V

Collector Cutoff Current

-

-

100

µA

Emitter Cutoff Current

-

-

100

µA

-

-

0.8

V

-

-

1.2

V

15

-

55

-

10

-

-

-

10

-

-

-

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

A

B1

B2

B3

B4

Range

15~28

22~35

29~42

36~49

43~55