2SD313

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for general-purpose amplifier and switching

applications.

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

5

V

Collector Current

3

A

Total Power Dissipation

2

W

30

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

60

-

-

V

Collector-Emitter Breakdown Voltage

60

-

-

V

Emitter-Base Breakdown Voltage

5

-

-

V

Collector Cutoff Current

-

-

0.1

mA

-

-

5

mA

Emitter Cutoff Current

-

-

1

mA

-

-

1

V

-

-

1.5

V

40

-

320

-

40

-

-

-

Transition Frequency

-

8

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

C

D

E

F

Range

40~80

60~120

100~200

160~320