BC307

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose switching and amplifier

applications.

Pinning

1 = Collector

2 = Base

3 = Emitter

TO-92

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Dimensions in inches and (millimeters)

Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

-50

V

-45

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Total Power Dissipation

500

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Rank

A

B

C

Range

120~220

180~460

380~800

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Emitter Breakdown Volatge

-50

-

-

V

-45

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

Collector Cutoff Current

-

-2

-15

nA

-

-

-0.3

V

-

-0.5

-0.6

V

-

-0.7

-0.8

V

-

-0.85

-1.1

V

-0.55

-0.62

-0.7

V

120

-

800

-

Transition Frequency

-

130

-

MHz

Output Capacitance

-

-

6

pF

Noise Figure

NF

-

-

10

dB

µA, f=1KHz,

Ω, B=200Hz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%