IRF640

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Features

* Repetitive Avalanche Rated

* Fast Switching

* Ease of Paralleling

* Simple Drive Requirements

Pinning

1 = Gate

2 = Drain

3 = Source

Characteristic

Symbol

Rating

Unit

Continuous

18

A

Pulsed

72

Gate-to-Source Voltage

20

V

125

W

1.0

Operating Junction Temperature

-55 to +150

o

C

Storage Temperature

-55 to +150

o

C

Maximum Lead Temperature for Soldering Purposes,

260

o

C

1/8" from Case for 10 Seconds

Description

Designed for low voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

Symbol

S

D

G

N-Channel MOSFET

TO-220AB

Dimensions in inches and (millimeters)

.295(7.49)

.220(5.58)

Typ

.024(0.60)

.014(0.35)

.055(1.40)

.045(1.14)

.562(14.27)

.500(12.70)

.625(15.87)

.570(14.48)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.151

(3.83)

1

2

3

Absolute Maximum Ratings