IRF830

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Features

* Repetitive Avalanche Rated

* Fast Switching

* Ease of Paralleling

* Simple Drive Requirements

Pinning

1 = Gate

2 = Drain

3 = Source

Description

Designed to withstand high energy in the avalanche mode and

switch efficiently. Also offer a drain-to-source diode with fast

recovery time. Designed for high voltage, high speed applications

such as power supplies, PWM motor controls and other inductive

loads, the avalanche energy capability is specified to eliminate

the guesswork in designs where inductive loads are switched and

offer additional safety margin against unexpected voltage transients.

Symbol

S

D

G

N-Channel MOSFET

TO-220AB

Dimensions in inches and (millimeters)

.295(7.49)

.220(5.58)

Typ

.024(0.60)

.014(0.35)

.055(1.40)

.045(1.14)

.562(14.27)

.500(12.70)

.625(15.87)

.570(14.48)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.151

(3.83)

1

2

3

Characteristic

Symbol

Rating

Unit

Continuous

4.0

A

Pulsed

10

Gate-to-Source Voltage

20

V

75

W

0.6

Operating Junction Temperature

-55 to +150

o

C

Storage Temperature

-55 to +150

o

C

Maximum Lead Temperature for Soldering Purposes,

260

o

C

1/8" from Case for 10 Seconds

Absolute Maximum Ratings