TIP117

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description

Designed for use in general purpose amplifier and

low-speed switching applications.

Pinning

1 = Base

2 = Collector

3 = Emitter

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

-100

-

-

V

Collector-Emitter Breakdown Voltage

-100

-

-

V

Collector Cutoff Current

-

-

-1

mA

-

-

-2

mA

Emitter Cutoff Current

-

-

-2

mA

-

-

-2.5

V

-

-

-2.8

V

1K

-

-

-

500

-

-

-

Output Capacitance

-

-

200

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

-100

V

Collector-Emitter Voltage

-100

V

Emitter-Base Voltage

-5

V

Collector Current (continuous)

-4

A

Collector Current (peak)

-6

A

50

W

Total Power Dissipation

2

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C