SIR484DP datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 69024

S-82664-Rev. A, 03-Nov-08

www.vishay.com

Vishay Siliconix

SiR484DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.000

0.003

0.006

0.009

0.012

0.015

10203040

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

ID = 17.2 A

VDS =10 V

VDS =16 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

300

600

900

1200

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

VGS =10 V

VGS =4.5 V

ID =17.2A

TJ -Junction Temperature (°C)

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