SIS412DN datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 69006

S09-0135-Rev. C, 02-Feb-09

www.vishay.com

Vishay Siliconix

SiS412DN

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.010

0.015

0.020

0.025

0.030

0.035

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

024

VDS =24 V

ID =7.8 A

VDS =15 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

100

200

300

400

500

600

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

VGS =4.5 V

VGS =10 V

ID =7.8 A

TJ -Junction Temperature (°C)

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