P3335

ETALDOC 703/9

Page 2 of 5

April 2005

SPECIFICATIONS

Electrical

At T = 25ºC and as reference circuit Fig. 2 unless otherwise stated.

Parameter

Conditions

Min

Typ

Max

Units

Insertion Loss

-

1.4

-

dB

Frequency Response

LF -3dB cutoff

HF -3dB cutoff

100Hz – 4kHz

-

-

-

10

55

-

-

±0.1

Hz

kHz

dB

Return Loss

200Hz – 4kHz

25

30

-

dB

Third Harmonic

Distortion

(1)

150Hz -3dBm in line

200Hz -3dBm in line

-

-

-76

-80

-

-

dBm

dBm

Voltage Isolation

(2)

50Hz

DC

2.12

3.0

-

-

-

-

kVrms

kV

Operating Range:

Functional

Storage

0

-40

-

-

+70

+85

ºC

ºC

Lumped equivalent circuit parameters as Fig. 1

(3)

Primary resistance

66

-

80

Ω

Secondary resistance

90

-

110

Ω

Leakage inductance,

ΔL

2.1

2.9

3.6

mH

Shunt inductance, Lp

200Hz 0.25V

5

12

-

H

Shunt loss, Rp

200Hz 0.25V

10

15

-

k

Ω

Notes:

1. Third

harmonic

typically

exceeds

other

harmonics by 10dB.

2. Components are 100% tested at 3.25kVDC.

3. Caution:

do not pass DC through windings.

Telephone line current must be diverted using

semiconductor line hold circuit or choke.

Patented

Equivalent Circuit

Fig. 1

IDEAL

1:1

½ L

½ L

R

R