2N3906 datasheet(1/3 Pages) SECOS

Part #	2N3906

Description	PNP Silicon General Purpose Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

2N3906

PNP Silicon

General Purpose Transistor

TO-92

FEATURES

. Power Dissipation

PCM: 625 mW (Ta=25

)

. Collector Current

ICM: -200 mA

. Collector - Base Voltage

V(BR)CBO: -40 V

ELECTRICAL CHARACTERISTICS (TA = 25

unless otherwise specified)

Parameter

SYMBOL

TEST CONDITIONS

Min.

Typ.

Max.

UNIT

Collector - Emitter Breakdown Voltage

V(BR)CEO

IC = -1 mA, IB = 0 A

-40

-

V

Collector - Base Breakdown Voltage

V(BR)CBO

IC = -100 µA, IE = 0 A

-40

-

V

Emitter - Base Breakdown Voltage

V(BR)EBO

IE = -100 µA, IC = 0 A

-5

-

V

Collector Cut-Off Current

ICBO

VCB = -40 V, IE = 0 A

-

-0.1

Collector Cut-Off Current

ICEO

VCE = -40 V, IB = 0 A

-

-0.1

Emitter Cut-Off Current

IEBO

VEB = -5 V, IC = 0 A

-

-0.1

µA

hFE(1)

VCE = -1 V, IC = -10 mA

100

-

400

DC Current Gain

hFE(2)

VCE = -1 V, IC = -50 mA

60

-

Collector - Emitter Saturation Voltage

VCE(sat)

IC = -50 mA, IB = -5 mA

-

0.3

V

Base - Emitter Saturation Voltage

VBE(sat)

IC = -50 mA, IB = -5 mA

-

-0.95

V

VCE = -20 V, IC = -10 mA

Transition Frequency

fT

f = 100 MHz

250

-

MHz

Operating and Storage Junction Temperature Range

TJ, TSTG

-

-55 ~ +150

CLASSIFICATION OF hFE(1)

Rank

O

Y

G

Rang

100 ~ 200

200 ~ 300

300 ~ 400

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER

01-Jun-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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