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2N4403 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N4403 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente 2N4403 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 4.55±0.2 3.5±0.2 2.54±0.1 (1.27 Typ.) 0.46+0.1 –0.1 0.43+0.08 –0.07 1 3 2 1: Emitter 2: Base 3: Collector 1.25–0.2 +0.2 TO-92 FEATURES Power Dissipation MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT -40 -40 -6 -0.75 C o C o C o C o C o 01-Jun-2002 Rev. A Page 1 of 3 PNP Transistor Plastic-Encapsulate Transistors VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 PC * Collector Power dissipation 0.625 TJ Junction Temperature 150 Tstg Storage Temperature -55to +150 R θJA Thermal Resistance, junction to Ambient 357 /mW V V mA W Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA hFE(1) VCE=-1V,IC=-0.1mA 30 hFE(2) VCE=-1V,IC=-1mA 60 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-150mA 100 300 DC current gain hFE(5) VCE=-2V,IC=-500mA 20 VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V VBE(sat)1 IC=-150mA,IB=-15mA -0.95 V Base-emitter saturation voltage VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V Transition frequency fT VCE=-10V,IC=-20mA,f=100MHz 200 MHz Collector capacitance Cob VCB=-10V,IE=0,f=100KHz 8.5 pF Delay time td 15 nS Rise time tr 20 nS Storage time tS 225 nS Fall time tf VCC=-30V, IC=-150mA IB1=- IB2=-15mA 30 nS RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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