2SA1037 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

2SA1037

- 0.15A, - 50V

Small Signal Plastic Encapsulate Transistor

ELECTRICAL CHARACTERISTICS (Ta = 25

)

TYPE NUMBER

SYMBOL

Min.

Typ.

Max.

UNIT

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO

- 60

IC = 50 µA

Collector-Emitter Breakdown Voltage

BVCEO

- 50

IC = 1 µA

Emitter-Base Breakdown Voltage

BVEBO

- 6

IE = 50 µA

Collector Cutoff Current

ICBO

- 0.1

µA

VCB = 60 V

Emitter Cutoff Current

IEBO

- 0.1

µA

VEB = 6 V

Collector-Emitter Saturation Voltage

VCE (sat)

- 0.5

IC / IB = 50 mA / 5 mA

DC Current Transfer Ratio

hFE

120

560

VCE = 6 V, IC = 1 mA

VCE = 12 V, IE = 2 mA,

Transition Frequency

140

MHz

f = 30 MHz

VCB = 12 V, IE = 0 A,

Output Capacitance

Cob

4.0

5.0

f = 1 MHz

hFE VALUES ARE CLASSIFIED AS FOLLOWS:

ITEM

hFE

120 ~ 270

180 ~ 390

270 ~ 560

Marking

ELECTRICAL CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Fig.1 Grounded emitter propagation

characteristics

−0.2

−50

−20

−10

−5

−2

−1

−0.5

−0.2

−0.1

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

VCE=

−6V

BASE TO EMITTER VOLTAGE : VBE (

Ta=100˚C

25˚C

−40˚C

Fig.2 Grounded emitter output

characteristics (I)

−0.4

−4

−8

−1.2

−2

−6

−10

−0.8

−1.6

−2.0

−3.5µA

−7.0

−10.5

−14.0

−17.5

−21.0

−24.5

−28.0

−31.5

IB=0

Ta=25˚C

−35.0

COLLECTOR TO MITTER VOLTAGE : VCE (

Fig.3 Grounded emitter output

characteristics (II)

−40

−80

−5

−3

−4

−2

−1

−20

−60

−100

IB=0

Ta=25˚C

COLLECTOR TO EMITTER VOLTAGE : VCE (

−50µA

−100

−150

−200

−250

−500

−450

−400

−350

−300

01-Jun-2002 Rev. A

Page 1 of 2

2SA1037 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

2SA1037 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3

Datasheet Download

Link URL