Any changing of specification will not be informed individual

2SA1162

PNP Silicon

General Purpose Transistor

Collector

3

1

Base

2

Emitter

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

p.),10dB (Max.)

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

http://www.SeCoSGmbH.com

Elektronische Bauelemente

FEATURES

n

Low noise : NF= 1dB(Ty

n

RoHS Compliant Product

n

Complementary to 2SC2712.

n

Small Package.

O

)

Symbol

Parameter

Value

Units

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current -Continuous

150

mA

Total Device Dissipation

150

mW

Junction and Storage Temperature

-55

~125

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

-50

V

Collector-emitter breakdown voltage

-50

V

Emitter-base breakdown voltage

-5

V

Collector cut-off current

-0.1

u A

Emitter cut-off current

-0.1

u A

DC current gain

70

400

Collector-emitter saturation voltage

-0.3

V

Transition frequency

80

MHz

Collector output capacitance

7

pF

Noise figure

NF

f=1KHZ,Rg=10KΩ

10

dB

CLASSIFICATION OF

Rank

O

Y

GR(G)

Range

70-140

120-240

200-400

Marking

SO

SY

SG

01-Jun-2002 Rev. A

Page 1 of 2

A suffix of "-C" specifies halogen & lead-free