2SA1576A datasheet(1/3 Pages) SECOS

Part #	2SA1576A

Description	PNP Silicon Epitaxial Planar Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2SA1576A

PNP Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

*Complements the 2SC4081

Feature

The 2SA1576A is designed for use

in driver stage of AF amplifier and

general purpose amplificaion.

Description

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 1 of 3

Absolute Maximum Ratings at Ta = 25C

Parameter

Symbol

Ratings

Unit

Junction

Temperature

Tj,

Storage

Tstg

-55~+150

Collector to Base Voltage

VCBO

-60

V

Collector to Emitter Voltage

VCEO

-50

V

Emitter to Base Voltage

VEBO

V

Collector Current

IC

-150

mA

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 2

Parameter

Symbol Min Typ. Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-60

-

V

IC=-50uA

Collector-Emitter Breakdown Voltage

BVCEO

-50

-

V

IC=-1mA

Emitter-Base Breakdown Voltage

BVEBO

-6

-

V

IE=-50uA

Collector-Emitter Breakdown Voltage

ICBO

-

-100

nA

VCB=-60V

Emitter-Base Cutoff Current

IEBO

-

-100

nA

VEB=-6V

Collector Saturation Voltage

VCE(sat)

-

-500

mV

IC=-50mA, IB=-5 mA

DC Current Gain

hFE

120

-

560

-

VCE=-6V, IC=-1mA

Gain-Bandwidth Product

fT

-

140

-

MHz

VCE=-12V, IC=-2mA, f=100MHz

Output Capacitance

Cob

-

4

5

pF

VCB=-12V, f=1MHz, IE=0

Range

120 - 270

180 - 390

270 - 560

Classification of hFE

Rank

5AQ

5AR

5AS

and

C

o

5C

o

-6

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

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