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2SA1774 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1774 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual 2SA1774 PNP Silicon General Purpose Transistor FEATURES · Expitaxial planar type · PNP Silicon Teansistor STRUCTURE · Low Cob. Cob=4.0pF · Compements the 2SC4617 Dim Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm SOT-523 S G D B L A 1 3 2 Top View H C J K 2 1 3 http://www.SeCoSGmbH.com Elektronische Bauelemente Emitter Base Collector ! ! ! ! Absolute maximum (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg -60 V V V A W °C °C -50 -6 -0.15 IC 0.15 150 −55~+150 Symbol Limits Unit hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 ! ! ! ! Electrical characteristics (Ta=25 °C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. -60 -50 -7 − − 120 − − − − − − − − − − 140 4.0 − − − -0.1 -0.1 560 -0.5 − 5.0 VIC=-50 µA IC=-1uA IE=-50 µA VCB=-60V VEB=-6V VCE=-6V, IC=-1mA IC/IB=-50mA/-5mA VCE=-12V, IE= −2mA, f=30MHz VCE=-12V, IE=0A, f=1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions Transition frequency Marking FQ FR FS RoHS Compliant Product 01-Jun-2002 Rev. A Page 1 of 2 |
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