Elektronische Bauelemente

2SA1797

PNP

General Purpose Transistor

01-June-2005 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

2

3

1. Base

2. Collector

3. Emitter

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High transition frequency

High power dissipation

PACKAGE DIMENSIONS

MARKING : AGX

X = hFE Rank Code

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-6

V

Collector Current -Continuous

-2

A

Collector Dissipation

0.5

W

Junction & Storage temperature

150, -55~150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

-50

-

V

Collector-emitter breakdown voltage

-50

-

V

Emitter-base breakdown voltage

-6

-

V

Collector cut-off current

-

-0.1

μA

Emitter cut-off current

-

-0.1

μA

DC current gain

82

270

Collector-emitter saturation voltage

-

-0.35

V

Typical Transition frequency

-

200

-

MHz

Output Capacitance

36

pF

CLASSIFICATION OF hFE2

Rank

P

Q

Range

82 - 180

120 - 270

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

3.00

REF.

B

4.05

4.25

H

1.50

REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5° TYP.

M0.70 REF.

SOT-89

G

L

H

I

A

C

D