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2SD601A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD601A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page ![]() Elektronische Bauelemente 2SD601A NPN Plastic-Encapsulate Transistor 01-June-2005 Rev. A Page 1 of 1 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Power dissipation PCM: 0.2 W (TAMB=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,TSTG: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS at TA = 25°C PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 V(BR)CBO 60 - - V Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0 V(BR)CEO 50 - - V Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 V(BR)EBO 7 - - V Collector Cut-off Current VCB = 20V, IE = 0 ICBO - - 0.1 μA Collector Cut-off Current VEB = 10V, IC = 0 ICEO - 100 μA Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA VCE(sat) - - 0.3 V VCE = 10 V, IC = 2 mA hFE(1) 160 - 460 DC Current Gain VCE = 2 V, IC = 100 mA hFE(2) 90 - - Transition Frequency VCE = 10V, IC = 2mA, f = 200MHz fT - 150 - MHz Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz COB - 3.5 - pF CLASSIFICATION OF hFE(1) Rank Q R S Range 160 - 260 210 - 340 290 - 460 Marking ZQ ZR ZS Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View 1 2 3 |
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