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2SD1949 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD1949 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Any changing of specification will not be informed individual 2SD1949 NPN Silicon General Purpose Transistor RoHS Compliant Product * High current.(IC=5A) * Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA FEATURES COLLECTOR BASE EMITTER Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm SOT-323 K J C H L A B S G V 3 1 2 D Top View 1 2 3 http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 1 of 4 MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA , IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 30 V, IE=0 0.5 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 µA DC current gain hFE VCE=3V, IC=10mA 120 390 Collector-emitter saturation voltage VCE(sat) IC= 150mA, IB=15mA 0.4 V Transition frequency fT VCE=5V, IC=20mA f=100 MHz 250 MHz Output capacitance Cob VCB=10V, IE=0,f=1 MHz 6.5 pF CLASSIFICATION OF hFE Rank Q R Range 120-270 180-390 Marking YQ YR |
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