2SD2150 datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

Any changing of specification will not be informed individual

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Page 2 of 2

Characteristics Curve

2SD2150

NPN

Plastic-Encapsulate Transistor

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1

Grounded emitter propagation

characteristics

0.01

0.02

0.05

0.1

0.2

0.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VCE

=2V

°C

−40°C

=100°C

0.4

0.8

1.2

1.6

0.2

0.4

0.6

0.8

1.0

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2

Grounded emitter output

characteristics ( )

8mA

6mA

4mA

2mA

20mA

18mA

16mA

14mA

12mA

10mA

=25°C

=0A

012345

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.3

Grounded emitter output

characteristics ( )

=25°C

=0A

35mA

30mA

25mA

20mA

15mA

10mA

5mA

40mA

45mA

50mA

100

200

500

1000

2000

5000

2m 5m 0.010.02 0.05 0.10.2 0.5 1

5 10

VCE

=2V

°C

−40°C

=100°C

COLLECTOR CURRENT : IC

(A)

Fig.4

DC current gain vs.

collector current

COLLECTOR CURRENT : IC

(A)

Fig.6

Collector-emitter

saturation voltage vs.

collector curren ( )

0.01

1m 2m 5m

0.02 0.05

0.02

0.05

0.5

0.2

0.1

0.2

0.5

lC/lB

=20

°C

−40°C

=100°C

10m

20m

50m

0.1

0.2

0.5

2m 5m10m20m50m0.1 0.2 0.5 1 2

5 10

COLLECTOR CURRENT : IC

(A)

Fig.5

Collector-emitter

saturation voltage vs.

collector current ( )

IC/IB

=10

=100°C

°C

−40°C

100

200

500

1000

0.1 0.2

0.5

COLLECTOR TO BASE VOLTAGE : VCB

(V)

EMITTER TO BASE VOLTAGE : VEB

(V)

Fig.9

Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Cob

=25°C

=1MHz

=0A

10m

20m

50m

0.1

0.2

0.5

COLLECTOR CURRENT : IC

(A)

Fig.7

Collector-emitter

saturation voltage vs.

collector current (

)

2m 5m10m20m50m

0.2 0.5 1 2

5 10

0.1

IC/IB

=20

=100°C

°C

−40°C

−5

−2

−1

−10 −20 −50−100 −200−500−1000

EMITTER CURRENT : IE

(mA)

Fig.8

Gain bandwidth product vs.

emitter current

1000

500

200

100

Ta=25

°C

VCE=2V

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