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A44 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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A44 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual A44 NPN Silicon Plastic-Encapsulate Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 TO-92 1. EMITTER 2. BASS . COLLECTOR 1 2 3 3 2 1 3 3 FEATURES * High voltage MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=400 V, IE=0 0.1 µA Collector cut-off current ICEO VCE=400 V 5 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA HFE (1) VCE=10V , IC=10 mA 80 300 HFE(2) VCE=10V, IC=1mA 70 HFE(3) VCE=10V, IC=100 mA 60 DC current gain HFE(4) VCE=10V, IC=50 mA 80 VCE(sat) IC=10 mA, IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.3 V Base-emitter sataration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V Transition frequency f T VCE=20V, IC=10mA f =30MHz 50 MHz CLASSIFICATION OF hFE(1) Rank A B1 B2 C Range 80-100 100-150 150-200 200-300 * High Reliability 01-Jun-2002 Rev. A Page 1 of 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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