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A92 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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A92 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual A92 PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente 1 2 TO-92 1. EMITTER 2. BASS . COLLECTOR 1 2 3 3 3 01-Jun-2002 Rev. A Page 1 of 3 FEATURES High voltage PNP Transistor MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V IE=0 -0.25 μA Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 μA hFE(1) VCE= -10 V, IC=- 1 mA 60 hFE(2) VCE= -10V, IC = -10 mA 80 250 DC current gain hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V Transition frequency fT VCE= -20 V, IC= -10 mA f = 30MHz 50 MHz CLASSIFICATION OF hFE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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