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BAS21H Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS21H Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente BAS21H Surface Mount Switching Diode 01-Jun-2005 Rev. B Page 1 of 2 SOD-323 Cathode Band G E A J F D H C B 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast Switching Speed Surface Mount Package Ideally Suited for automatic Insertion For General Purpose Switching Applications MARKING: T3 ABSOLUTE MAXIMUM RATINGS (Single diode @ TA = 25°C) Parameter Symbol Ratings Unit Continuous Reverse Voltage VR 250 V Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(Surge) 625 mA THERMAL CHARACTERISTICS Parameter Symbol Maximum Ratings Unit Total Device Dissipation FR–5 Board (1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW / °C Thermal Resistance Junction to Ambient R θJA 556 °C / W Total Device DissipationAlumina Substrate, (2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW / °C Thermal Resistance Junction to Ambient RθJA 417 °C / W Junction, Storage Temperature TJ, TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions Off Characteristics Reverse Voltage Leakage Current IR - - 1.0 100 μA VR = 200 Vdc VR = 200 Vdc, TJ = 150°C Reverse Breakdown Voltage V(BR) 250 - Vdc IBR = 100 μAdc VF1 - 1000 IF = 100 mA Forward Voltage VF2 - 1250 mV IF = 200 mA Diode Capacitance CD - 5.0 pF VR = 0, f = 1MHz Reverse Recovery Time tRR - 50 nS IF = IR = 30 mA, RL=100Ω 1. FR - 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 |
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