BAS70W datasheet(1/2 Pages) SECOS

Part #	BAS70W

Description	Surface Mount Schottky Barrier Diodes

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

BAS70W/-04W/-05W/-06W

VOLTAGE 70 V, 70 mA

Surface Mount Schottky Barrier Diodes

01-June-2005 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low Turn-on voltage

Low Forward Voltage - 0.75V(Max) @ IF = 10 mA

Very Low Capacitance - Less Than 2.0pF @ 0V

For high speed switching application, circuit protection

MECHANICAL DATA

Case: SOT-323, Molded Plastic

Terminals: Solderable per MIL-STD-202,Method 208

Polarity: See Diagrams Below

Weight: 0.004 grams (approx.)

Mounting Position: Any

BAS70W Marking: K7C, BE

BAS70-04W Marking: K74

BAS70-05W Marking: K75

BAS70-06W Marking: K76

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ = 150°C unless otherwise noted)

TYPE NUMBER

SYMBOL

VALUES

UNITS

Reverse Voltage

VR

70

V

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF

225

1.8

mW

mW / °C

Forward Continuous Current

IFM

70

Single Forward Current

t ≦ 10 m

IFSM

100

mA

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

℃

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Reverse breakdown voltage

V(BR)R

IR= 10µA

70

-

V

Diode capacitance

CT

VR=0, f=1MHz

-

2.0

pF

Reverse voltage leakage current

IR

VR=50V

VR=70V

-

0.1

10

μA

Forward voltage

VF

IF=1.0 mA

IF=10 mA

IF=15 mA

-

410

750

1000

mV

SOT-323

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.00

2.20

G

0.100 REF.

B

2.15

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.15

D

0.90

1.10

K

-

E

1.20

1.40

L

0.525 TYP.

F

0.20

0.40

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