Any changing of specification will not be informed individual

BAV70

Dual Chips Common Cathode

Surface Mount Switching Diode

A

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BAV70 = A4

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

—

Vdc

Reverse Voltage Leakage Current

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

60

2.5

100

µAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

1.5

pF

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

—

—

—

—

715

855

1000

1250

mVdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω

trr

—

6.0

ns

1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

FEATURES

·

Fast Switching Speed

·

Surface Mount Package Ideally Suited for

Automatic Insertion

·

For General Purpose Switching Applications

·

High Conductance

3

CATHODE

ANODE

1

2

ANODE

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

B S

G

V

3

1

2

D

Top View

1

2

3

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free