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BC635 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # BC635
Description  NPN Type Plastic Encapsulated Transistor
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC635 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BC635 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BC635 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
BC635 / BC637 / BC639
NPN Type
Plastic Encapsulated Transistor
Elektronische Bauelemente
FEATURE
High current transistor
MAXIMUM RATINGS
(TA=25 C unless otherwise specified)
PARAMETERS
PARAMETERS
SYMBOL
TEST CONDITIONS
UNIT
SYMBOLS
VALUES
UNIT
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Collector - emitter breakdown voltage
Collector - emitter saturation voltage
Base - emitter voltage
Transition frequency
Collector cut-off current
Emitter cut-off current
DC current gain
o
o
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise specified)
o
VCEO
V(BR)CEO
VCE(sat)
VBE
f T
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
BC635
BC637
BC639
BC635
BC637
BC639
BC635
BC635
IC=10mA, IB=0
VCB=30V, IE=0
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA, f=50MHz
VEB=5V, IB=0
BC637
BC637-10/BC639-10
BC637-16/BC639-16
BC639
VCBO
VEBO
IC
PC
TJ,TSTG
V
V
V
V
V
V
TYP
100
MAX
0.1
0.1
0.5
1
250
160
250
MIN
45
60
80
25
40
63
100
25
V
V
MHz
V
V
V
V
A
µA
µA
W
C
o
45
60
80
45
60
100
5
1
0.625
150, -65 ~ 150
01-Jun-2002 Rev. A
Page 1 of 2
4.55±0.2
3.5±0.2
2.54±0.1
(1.27 Typ.)
0.46
+0.1
–0.1
0.43
+0.08
–0.07
13
2
1: Emitter
3: Base
2: Collector
1.25–0.2
+0.2
TO-92
BC635
40-250
BC637-10, BC639-10
63-160
BC637-16, BC639-16
100-250
RANK
RANGE
CLASSIFICATION OF hFE(2)
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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