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BZT52C33 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BZT52C33 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Surface Mount Zener Diode BZT52C Series ● Electrical Characteristics @ TA=25℃ unless otherwise specified 500mW, SOD-123 Zener Voltage Range (Note 2) VZ Maximum Zener Impedance (Note 3) Maximum Reverse Current (Note 2) Min Nom Max @IZT ZZT@IZT ZZK@IZK IR VR Temperature Coefficient of Zener Voltage @ IZT = 5 mA mV / ℃ Type Number Marking Code V V V mA Ω Ω mA µA V Min Max BZT52C2V4 WX 2.2 2.4 2.6 5 100 600 1.0 50 1.0 -3.5 0 BZT52C2V7 W1 2.5 2.7 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZT52C3V0 W2 2.8 3.0 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZT52C3V3 W3 3.1 3.3 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZT52C3V6 W4 3.4 3.6 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZT52C3V9 W5 3.7 3.9 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZT52C4V3 W6 4.0 4.3 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZT52C4V7 W7 4.4 4.7 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZT52C5V1 W8 4.8 5.1 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZT52C5V6 W9 5.2 5.6 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZT52C6V2 WA 5.8 6.2 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZT52C6V8 WB 6.4 6.8 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZT52C7V5 WC 7.0 7.5 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZT52C8V2 WD 7.7 8.2 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZT52C9V1 WE 8.5 9.1 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZT52C10 WF 9.4 10 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZT52C11 WG 10.4 11 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZT52C12 WH 11.4 12 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZT52C13 WI 12.4 13 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 BZT52C15 WJ 13.8 15 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZT52C16 WK 15.3 16 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZT52C18 WL 16.8 18 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 BZT52C20 WM 18.8 20 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZT52C22 WN 20.8 22 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZT52C24 WO 22.8 24 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZT52C27 WP 25.1 27 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZT52C30 WQ 28.0 30 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 BZT52C33 WR 31.0 33 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 BZT52C36 WS 34.0 36 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZT52C39 WT 37.0 39 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZT52C43 WU 40.0 43 46.0 5 100 700 1.0 0.1 32.0 10.0 12.0 BZT52C47 WV 44.0 47 50.0 5 100 750 1.0 0.1 35.0 10.0 12.0 BZT52C51 WW 48.0 51 54.0 5 100 750 1.0 0.1 38.0 10.0 12.0 Notes: 1. Valid provided that device terminals are keep at ambient temperature 2. Test with pulses. period = 5 ms, pulse width = 300 µA 3. f = 1 K Hz ● Maximum Ratings @ TA=25℃ unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 1), Derate above 25 ℃ Pd 500 mW Forward Voltage (Note 2) @ IF = 10 mA VF 0.9 V Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 305 ℃ / W Operating and Storage Temperature Range TJ , TSTG -65 ~ +150 ℃ Notes: 1. Device mounted on ceramic PCB; 7.6mm×9.4mm×0.87mm with pad areas 25mm 2. 2. Short duration test pulse used in minimize self-heating effect. 3. f = 1 K Hz http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 |
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