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BZT52C33 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # BZT52C33
Description  Surface Mount Zener Diode
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BZT52C33 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Surface Mount Zener Diode
BZT52C Series
● Electrical Characteristics @ TA=25℃ unless otherwise specified
500mW, SOD-123
Zener Voltage Range
(Note 2)
VZ
Maximum Zener Impedance
(Note 3)
Maximum
Reverse
Current
(Note 2)
Min
Nom
Max
@IZT
ZZT@IZT
ZZK@IZK
IR
VR
Temperature
Coefficient of
Zener Voltage
@ IZT = 5 mA
mV / ℃
Type
Number
Marking
Code
V
V
V
mA
Ω
Ω
mA
µA
V
Min
Max
BZT52C2V4
WX
2.2
2.4
2.6
5
100
600
1.0
50
1.0
-3.5
0
BZT52C2V7
W1
2.5
2.7
2.9
5
100
600
1.0
20
1.0
-3.5
0
BZT52C3V0
W2
2.8
3.0
3.2
5
95
600
1.0
10
1.0
-3.5
0
BZT52C3V3
W3
3.1
3.3
3.5
5
95
600
1.0
5
1.0
-3.5
0
BZT52C3V6
W4
3.4
3.6
3.8
5
90
600
1.0
5
1.0
-3.5
0
BZT52C3V9
W5
3.7
3.9
4.1
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V3
W6
4.0
4.3
4.6
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V7
W7
4.4
4.7
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
BZT52C5V1
W8
4.8
5.1
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
BZT52C5V6
W9
5.2
5.6
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
BZT52C6V2
WA
5.8
6.2
6.6
5
10
150
1.0
3
4.0
0.4
3.7
BZT52C6V8
WB
6.4
6.8
7.2
5
15
80
1.0
2
4.0
1.2
4.5
BZT52C7V5
WC
7.0
7.5
7.9
5
15
80
1.0
1
5.0
2.5
5.3
BZT52C8V2
WD
7.7
8.2
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
BZT52C9V1
WE
8.5
9.1
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
BZT52C10
WF
9.4
10
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
BZT52C11
WG
10.4
11
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
BZT52C12
WH
11.4
12
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
BZT52C13
WI
12.4
13
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
BZT52C15
WJ
13.8
15
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
BZT52C16
WK
15.3
16
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
BZT52C18
WL
16.8
18
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
BZT52C20
WM
18.8
20
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
BZT52C22
WN
20.8
22
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
BZT52C24
WO
22.8
24
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
BZT52C27
WP
25.1
27
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
BZT52C30
WQ
28.0
30
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
BZT52C33
WR
31.0
33
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
BZT52C36
WS
34.0
36
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
BZT52C39
WT
37.0
39
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
BZT52C43
WU
40.0
43
46.0
5
100
700
1.0
0.1
32.0
10.0
12.0
BZT52C47
WV
44.0
47
50.0
5
100
750
1.0
0.1
35.0
10.0
12.0
BZT52C51
WW
48.0
51
54.0
5
100
750
1.0
0.1
38.0
10.0
12.0
Notes:
1. Valid provided that device terminals are keep at ambient temperature
2. Test with pulses. period = 5 ms, pulse width = 300 µA
3. f = 1 K Hz
● Maximum Ratings @ TA=25℃ unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1), Derate above 25 ℃
Pd
500
mW
Forward Voltage (Note 2) @ IF = 10 mA
VF
0.9
V
Thermal Resistance, Junction to Ambient Air (Note 1)
RθJA
305
℃
/ W
Operating and Storage Temperature Range
TJ , TSTG
-65 ~ +150
℃
Notes:
1. Device mounted on ceramic PCB; 7.6mm×9.4mm×0.87mm with pad areas 25mm
2.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1 K Hz
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4


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