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SID3403 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SID3403
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3403 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by Max. junction temperature.
1.
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
35
63
VSD
_
_
IS=-1.25A, VGS=0V.
V
-1.2
2
_
_
IS=-6A, VGS=0V.
dl/dt=100A/us
3.8
1.7
1.6
6.7
20.8
14.9
4.4
217
103
31
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=-15V
ID=-6A
VGS=-10V
RG=2
RD=2.5
Ω
Ω
ID=-6A
VDS=-24V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
30
0.1
1.0
-3.0
100
-1
-25
200
400
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
m
2
Ω
VGS=-10V, ID=- 6A
VGS=-4.5V, ID=-4A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
S
VDS=-10V, ID=-6 A
_
_
_
_
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
Forward Transconductance
Gfs
oC
oC
2
2
RDS(ON)
2
-
-
-
_
_
Source-Drain Diode
2.Pulse width 300us, dutycycle 2%.
≦
≦
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Elektronische Bauelemente
SID3403
-10A, -30V,RDS(ON)200m
P-Channel Enhancement Mode Power Mos.FET
Ω



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