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Dated : 23/11/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
25
V
Reverse Voltage
VR
20
V
Peak Forward Current
IFM
100
mA
Average Forward Current
IO
50
mA
Surge Current (10 ms)
IFSM
1
A
Power Dissipation
Ptot
100
mW
Junction Temperature
TJ
125
O
C
Storage Temperature
Ts
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 50 mA
VF
-
0.55
V
Reverse Current
at VR = 20 V
IR
-
0.5
µA
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
3.9
-
pF
Anode
2
Top View
Marking Code: "Q"
Simplified outline SOD-523 and symbol
1
Q
2
PINNING
1
PIN
Cathode
DESCRIPTION
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