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Dated : 30/01/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1SS294
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low reverse current
• Low forward voltage
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
40
V
Average Forward Current
IO
100
mA
Maximum Peak Forward Current
IFM
300
mA
Power Disspation
PD
150
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
0.6
V
Reverse Current
at VR = 40 V
IR
5
µA
Total Capacitance
at VR = 0 V, f = 1 MHz
CT
25
pF
1
3
2
Marking Code: "XM"
SOT-23 Plastic Package
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