SSD01L60 datasheet(4/4 Pages) SECOS

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SSD01L60 Datasheet(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH

Part #	SSD01L60

Description	N-Channel Enhancement Mode Power Mos.FET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

4 / 4 page

01-Jun-2002 Rev. A

Page 4 of 4

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Elektronische Bauelemente

SSD01L60

1A, 600V,RDS(ON)12

N-Channel Enhancement Mode Power Mos.FET

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