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SSG4410 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG4410
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4410 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSG4410
10A, 30V,RDS(ON) 13.5m
N-Channel Enhancement Mode Power Mos.FET
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient Max.
A
V
V
A
A
ID@TA=70
/W
C
W / C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
30
±20
50
10
8
2.5
0.02
-55~+150
50
o
o
1
o
C
o
C
o
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Ω
Description
The SSG4410 provide the designer with the best Combination of fast switching,
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
Features
* Dynamic dv/dt Rating
* Simple drive requirement
0.25
Dimensions in millimeters
6.20
5.80
1.27Typ.
0.35
0.49
4.80
5.00
0
0.100.25
1.35
1.75
0.40
0.90
0.19
0.25
3.80
4.00
0.375 REF
o
8
o
45
o
S
S
S
G
D
D
D
D
4410SC
Date Code
1
5
7
8
2
3
4
6
SOP-8
* Repetitive avalanche rated
* Fast switching
industrial surface mount application and suited for low
The SOP-8 is universally preferred for all commercial
voltage applications such as DC/DC converters.
01-Jun-2002 Rev. A
Page 1 of 5
S
D
G
RoHS Compliant Product


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