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SSG4575 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4575 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 7 page ![]() Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbo Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 72 88 21 5 9 12 6 82 36 1780 157 130 m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDS=-30V ID=-1A VGS=-10V RG=3.3 RD=30 Ω Ω ID=-4A VDS=-48V VGS=-4.5V VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2 Forward Transconductance Gfs S 6 VDS=-10V, ID=-4A _ _ _ 2 2 C o C o o 34 2850 VGS(th) IGSS IDSS -60 -0.04 =-60V,V =-48V,V -1.0 100 -1 -25 ± V V / V nA uA uA C o VGS=0V, ID=-250uA VGS= 20V ± VDS GS =0 VDS GS =0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA _ _ _ C o _ _ _ _ _ _ _ _ -3.0 01-Jun-2002 Rev. A Page 3 of 7 Elektronische Bauelemen Enhancement Mode Power Mos.FET te SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Ω Ω Source-Drain Diode Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage VDS _ _ IS=-1.7A Is=-4A, V 43 87 , VGS=0V. V nC nS -1.2 Reverse Recovery Time Reverse Recovery Charge GS =0V _ _ _ _ Trr Qrr dl/dt=100A/uS 2 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 3.Surface mounted on 1 in2copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. o |
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